Oxide Resistive Memory with Functionalized Graphene as Built-in Selector Element
نویسندگان
چکیده
منابع مشابه
Oxide resistive memory with functionalized graphene as built-in selector element.
DOI: 10.1002/adma.201400270 transfer was repeated several times (typically ∼3) in order to further improve the conductance of the electrodes, therefore forming a multilayer graphene (MLG) stack. An optical graph of the glass substrate with the MLG fi lm on top is displayed in Figure 1 b, showing high transparency. Subsequently, the MLG fi lm was patterned into bottom electrodes (BEs) with width...
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ژورنال
عنوان ژورنال: Advanced Materials
سال: 2014
ISSN: 0935-9648
DOI: 10.1002/adma.201400270